TW208086B - - Google Patents
Info
- Publication number
- TW208086B TW208086B TW080106031A TW80106031A TW208086B TW 208086 B TW208086 B TW 208086B TW 080106031 A TW080106031 A TW 080106031A TW 80106031 A TW80106031 A TW 80106031A TW 208086 B TW208086 B TW 208086B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
- G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
- G06F7/50—Adding; Subtracting
- G06F7/501—Half or full adders, i.e. basic adder cells for one denomination
- G06F7/5013—Half or full adders, i.e. basic adder cells for one denomination using algebraic addition of the input signals, e.g. Kirchhoff adders
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
- G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
- G06F7/49—Computations with a radix, other than binary, 8, 16 or decimal, e.g. ternary, negative or imaginary radices, mixed radix non-linear PCM
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2207/00—Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F2207/38—Indexing scheme relating to groups G06F7/38 - G06F7/575
- G06F2207/48—Indexing scheme relating to groups G06F7/48 - G06F7/575
- G06F2207/4802—Special implementations
- G06F2207/4818—Threshold devices
- G06F2207/482—Threshold devices using capacitive adding networks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2207/00—Indexing scheme relating to methods or arrangements for processing data by operating upon the order or content of the data handled
- G06F2207/38—Indexing scheme relating to groups G06F7/38 - G06F7/575
- G06F2207/48—Indexing scheme relating to groups G06F7/48 - G06F7/575
- G06F2207/4802—Special implementations
- G06F2207/4818—Threshold devices
- G06F2207/4826—Threshold devices using transistors having multiple electrodes of the same type, e.g. multi-emitter devices, neuron-MOS devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5611—Multilevel memory cell with more than one control gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computing Systems (AREA)
- Pure & Applied Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Computational Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Biophysics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Software Systems (AREA)
- Evolutionary Computation (AREA)
- Neurology (AREA)
- Molecular Biology (AREA)
- Computational Linguistics (AREA)
- Nonlinear Science (AREA)
- Data Mining & Analysis (AREA)
- Artificial Intelligence (AREA)
- Power Engineering (AREA)
- Algebra (AREA)
- General Health & Medical Sciences (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8315291 | 1991-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW208086B true TW208086B (en]) | 1993-06-21 |
Family
ID=13794263
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW080106031A TW208086B (en]) | 1991-03-21 | 1991-08-01 | |
TW080106033A TW203665B (en]) | 1991-03-21 | 1991-08-01 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW080106033A TW203665B (en]) | 1991-03-21 | 1991-08-01 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5587668A (en]) |
EP (1) | EP0578821B1 (en]) |
JP (1) | JP3303002B2 (en]) |
DE (1) | DE69229546T2 (en]) |
TW (2) | TW208086B (en]) |
WO (1) | WO1992016971A1 (en]) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5664211A (en) * | 1993-06-08 | 1997-09-02 | Theseus Research, Inc. | Null convention threshold gate |
US5764081A (en) * | 1991-05-17 | 1998-06-09 | Theseus Logic, Inc. | Null convention interface circuits |
US5796962A (en) * | 1991-05-17 | 1998-08-18 | Theeus Logic | Null convention bus |
US6020754A (en) * | 1991-05-17 | 2000-02-01 | Theseus Logic, Inc. | Look up table threshold gates |
EP0584265A4 (en) * | 1991-05-17 | 1994-05-18 | Theseus Research Inc | Null convention speed independent logic |
US5656948A (en) * | 1991-05-17 | 1997-08-12 | Theseus Research, Inc. | Null convention threshold gate |
US5930522A (en) * | 1992-02-14 | 1999-07-27 | Theseus Research, Inc. | Invocation architecture for generally concurrent process resolution |
JP3281936B2 (ja) | 1992-06-24 | 2002-05-13 | 日本電信電話株式会社 | 論理回路 |
JP3459017B2 (ja) * | 1993-02-22 | 2003-10-20 | 直 柴田 | 半導体装置 |
JPH06250994A (ja) * | 1993-02-22 | 1994-09-09 | Sunao Shibata | 演算装置 |
US5793662A (en) * | 1993-06-08 | 1998-08-11 | Theseus Research, Inc. | Null convention adder |
US5652902A (en) * | 1993-06-08 | 1997-07-29 | Theseus Research, Inc. | Asynchronous register for null convention logic systems |
JP3601540B2 (ja) * | 1994-02-15 | 2004-12-15 | 直 柴田 | 半導体装置 |
US6327607B1 (en) | 1994-08-26 | 2001-12-04 | Theseus Research, Inc. | Invocation architecture for generally concurrent process resolution |
DE59605524D1 (de) * | 1996-01-25 | 2000-08-03 | Siemens Ag | Halbleiterneuron mit variablen eingangsgewichten |
JPH09245110A (ja) * | 1996-03-13 | 1997-09-19 | Tadahiro Omi | フィードバック回路 |
ES2117564B1 (es) * | 1996-04-24 | 1999-04-01 | Mendez Vigo Barazona Javier | Transistor inecuacional o pseudoneuronal. |
DE19630111C1 (de) * | 1996-07-25 | 1997-08-14 | Siemens Ag | Vorrichtungen zur selbstjustierenden Arbeitspunkteinstellung in Verstärkerschaltungen mit Neuron-MOS-Transistoren |
JPH10224224A (ja) * | 1997-02-03 | 1998-08-21 | Sunao Shibata | 半導体演算装置 |
JPH10283793A (ja) * | 1997-02-06 | 1998-10-23 | Sunao Shibata | 半導体回路 |
JPH10224210A (ja) * | 1997-02-12 | 1998-08-21 | Fujitsu Ltd | 論理回路、フリップフロップ回路及び記憶回路装置 |
JPH10257352A (ja) | 1997-03-15 | 1998-09-25 | Sunao Shibata | 半導体演算回路 |
JPH10260817A (ja) | 1997-03-15 | 1998-09-29 | Sunao Shibata | 半導体演算回路及びデ−タ処理装置 |
JPH1196276A (ja) | 1997-09-22 | 1999-04-09 | Sunao Shibata | 半導体演算回路 |
US5907693A (en) * | 1997-09-24 | 1999-05-25 | Theseus Logic, Inc. | Autonomously cycling data processing architecture |
US5986466A (en) | 1997-10-08 | 1999-11-16 | Theseus Logic, Inc. | Programmable gate array |
US6397201B1 (en) * | 1997-12-02 | 2002-05-28 | David W. Arathorn | E-cell (equivalent cell) and the basic circuit modules of e-circuits: e-cell pair totem, the basic memory circuit and association extension |
US6031390A (en) * | 1997-12-16 | 2000-02-29 | Theseus Logic, Inc. | Asynchronous registers with embedded acknowledge collection |
WO1999031573A1 (fr) * | 1997-12-17 | 1999-06-24 | Kabushiki Kaisha Ultraclean Technology Research Institute | Procede et circuit semi-conducteur pour effectuer des operations arithmetiques |
US6262593B1 (en) | 1998-01-08 | 2001-07-17 | Theseus Logic, Inc. | Semi-dynamic and dynamic threshold gates with modified pull-up structures |
FI981301A0 (fi) | 1998-06-08 | 1998-06-08 | Valtion Teknillinen | Prosessivaihtelujen eliminointimenetelmä u-MOSFET-rakenteissa |
US6417539B2 (en) * | 1998-08-04 | 2002-07-09 | Advanced Micro Devices, Inc. | High density memory cell assembly and methods |
US6269354B1 (en) | 1998-11-30 | 2001-07-31 | David W. Arathorn | General purpose recognition e-circuits capable of translation-tolerant recognition, scene segmentation and attention shift, and their application to machine vision |
JP4663094B2 (ja) | 2000-10-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US7400527B2 (en) * | 2006-03-16 | 2008-07-15 | Flashsilicon, Inc. | Bit symbol recognition method and structure for multiple bit storage in non-volatile memories |
CN103716039B (zh) * | 2013-12-04 | 2016-05-18 | 浙江大学城市学院 | 一种基于浮栅mos管的增强型动态全加器 |
US10461751B2 (en) * | 2018-03-08 | 2019-10-29 | Samsung Electronics Co., Ltd. | FE-FET-based XNOR cell usable in neuromorphic computing |
JP2020052217A (ja) * | 2018-09-26 | 2020-04-02 | 株式会社ジャパンディスプレイ | 表示装置及び電子看板 |
CN112885830B (zh) * | 2019-11-29 | 2023-05-26 | 芯恩(青岛)集成电路有限公司 | 堆叠神经元器件结构及其制作方法 |
WO2022225948A1 (en) * | 2021-04-19 | 2022-10-27 | Trustees Of Dartmouth College | Multigate in-pixel source follower |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175770A (ja) * | 1983-03-25 | 1984-10-04 | Toshiba Corp | 半導体論理素子 |
JPS61255070A (ja) * | 1985-05-08 | 1986-11-12 | Seiko Epson Corp | 半導体集積回路 |
US5055897A (en) | 1988-07-27 | 1991-10-08 | Intel Corporation | Semiconductor cell for neural network and the like |
US4951239A (en) * | 1988-10-27 | 1990-08-21 | The United States Of America As Represented By The Secretary Of The Navy | Artificial neural network implementation |
US4999525A (en) | 1989-02-10 | 1991-03-12 | Intel Corporation | Exclusive-or cell for pattern matching employing floating gate devices |
JP2823229B2 (ja) * | 1989-04-05 | 1998-11-11 | 株式会社東芝 | 電子回路、差動増幅回路、及びアナログ乗算回路 |
JP2662559B2 (ja) * | 1989-06-02 | 1997-10-15 | 直 柴田 | 半導体装置 |
US5028810A (en) | 1989-07-13 | 1991-07-02 | Intel Corporation | Four quadrant synapse cell employing single column summing line |
US4961002A (en) | 1989-07-13 | 1990-10-02 | Intel Corporation | Synapse cell employing dual gate transistor structure |
-
1991
- 1991-08-01 TW TW080106031A patent/TW208086B/zh active
- 1991-08-01 TW TW080106033A patent/TW203665B/zh active
-
1992
- 1992-03-21 EP EP92907111A patent/EP0578821B1/en not_active Expired - Lifetime
- 1992-03-21 DE DE69229546T patent/DE69229546T2/de not_active Expired - Fee Related
- 1992-03-21 JP JP50673892A patent/JP3303002B2/ja not_active Expired - Fee Related
- 1992-03-21 WO PCT/JP1992/000347 patent/WO1992016971A1/ja active IP Right Grant
-
1993
- 1993-03-21 US US08/119,157 patent/US5587668A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3303002B2 (ja) | 2002-07-15 |
TW203665B (en]) | 1993-04-11 |
WO1992016971A1 (fr) | 1992-10-01 |
DE69229546D1 (de) | 1999-08-12 |
EP0578821B1 (en) | 1999-07-07 |
EP0578821A4 (en) | 1996-01-10 |
US5587668A (en) | 1996-12-24 |
DE69229546T2 (de) | 2000-03-02 |
EP0578821A1 (en) | 1994-01-19 |